This inventor holds 2 USPTO granted patents. Top assignee: Harris Corporation. Active years: 1987-1991.
Company Filing History:
Years Active: 1987-1991
Title: Jay D Moser, Sr: Innovator in Signal Buffer and Memory Cell Technologies
Introduction
Jay D Moser, Sr. is a notable inventor based in Palm Bay, FL (US). He has made significant contributions to the field of electronics, particularly in the development of signal buffer circuits and programmable memory cells. With a total of 2 patents, Moser's work has had a lasting impact on technology.
Latest Patents
Moser's latest patents include an "A-B buffer circuit with TTL compatible output drive." This invention features a multistage emitter-follower transistor circuit designed to meet TTL specifications. It incorporates a reference emitter-follower transistor stage and a current control transistor stage to minimize cross-over distortion in the output signal. Another significant patent is the "Integrated vertical NPN and vertical oxide fuse programmable memory cell." This method allows for the formation of an aligned vertical oxide fuse and emitter using a single mask, resulting in an integrated circuit with multiple regions of oxidation.
Career Highlights
Moser is currently associated with Harris Corporation, where he continues to innovate and develop advanced electronic solutions. His work has been instrumental in enhancing the performance and reliability of electronic devices.
Collaborations
Moser has collaborated with notable colleagues such as Kevin T Hankins and Mark W Michael, contributing to various projects that push the boundaries of technology.
Conclusion
Jay D Moser, Sr. is a distinguished inventor whose contributions to signal buffering and memory cell technologies have significantly advanced the field of electronics. His innovative spirit and dedication to research continue to inspire future developments in technology.