Santa Clara, CA, United States of America

Jason M Blackburn


Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 105(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2005)
  • Amherst, MA (US) (2004 - 2006)
  • Santa Clara, CA (US) (2006 - 2008)

Company Filing History:


Years Active: 2004-2008

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9 patents (USPTO):Explore Patents

Title: Jason M Blackburn: Innovator in Semiconductor Processing

Introduction

Jason M Blackburn is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor processing, holding a total of 9 patents. His innovative methods have advanced the technology used in the deposition of metal layers on dielectric substrates.

Latest Patents

Among his latest patents is a method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine-containing compounds. This patent provides methods for depositing a ruthenium metal layer on a dielectric substrate by exposing the substrate to an amine-containing compound, followed by a ruthenium precursor. Another notable patent involves the use of metallocenes to inhibit copper oxidation during semiconductor processing. This method protects exposed copper surfaces of partially fabricated integrated circuits from oxidation in oxygen-containing environments.

Career Highlights

Throughout his career, Jason has worked with notable companies such as Novellus Systems Incorporated and the University of Massachusetts. His work has been instrumental in developing techniques that enhance semiconductor manufacturing processes.

Collaborations

Jason has collaborated with several professionals in his field, including Jeremie James Dalton and Sanjay Gopinath. These collaborations have contributed to the advancement of semiconductor technologies.

Conclusion

Jason M Blackburn is a key figure in the semiconductor industry, with a focus on innovative methods that improve processing techniques. His contributions continue to influence the field significantly.

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