Location History:
- Sunnyvale, CA (US) (2005)
- Amherst, MA (US) (2004 - 2006)
- Santa Clara, CA (US) (2006 - 2008)
Company Filing History:
Years Active: 2004-2008
Title: Jason M Blackburn: Innovator in Semiconductor Processing
Introduction
Jason M Blackburn is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor processing, holding a total of 9 patents. His innovative methods have advanced the technology used in the deposition of metal layers on dielectric substrates.
Latest Patents
Among his latest patents is a method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine-containing compounds. This patent provides methods for depositing a ruthenium metal layer on a dielectric substrate by exposing the substrate to an amine-containing compound, followed by a ruthenium precursor. Another notable patent involves the use of metallocenes to inhibit copper oxidation during semiconductor processing. This method protects exposed copper surfaces of partially fabricated integrated circuits from oxidation in oxygen-containing environments.
Career Highlights
Throughout his career, Jason has worked with notable companies such as Novellus Systems Incorporated and the University of Massachusetts. His work has been instrumental in developing techniques that enhance semiconductor manufacturing processes.
Collaborations
Jason has collaborated with several professionals in his field, including Jeremie James Dalton and Sanjay Gopinath. These collaborations have contributed to the advancement of semiconductor technologies.
Conclusion
Jason M Blackburn is a key figure in the semiconductor industry, with a focus on innovative methods that improve processing techniques. His contributions continue to influence the field significantly.