Yongin-si, South Korea

Janghee Lee

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Janghee Lee. Retrieved from https://idiyas.com/inventor/janghee-lee-ksu0e76h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Janghee Lee: Semiconductor Processing Invention

Introduction

Janghee Lee is an inventor based in Yongin-si, South Korea. His patent work concerns semiconductor manufacturing technology, and he is associated with Samsung Electronics.

Latest Patents

Lee is credited with 1 patent: “Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device Using the Same.” The invention describes an apparatus that supports multiple substrates inside a chamber. An upper plate has separate plate portions positioned above the substrate support, defining multiple process regions and helping separate at least two of them. The design includes a pretreatment region with a first height and a deposition region with a greater second height. The patent also describes using the apparatus in a method for manufacturing a semiconductor device.

Career Highlights

Lee’s listed patent reflects work on equipment and process design for semiconductor fabrication. The invention’s distinct pretreatment and deposition regions are intended to accommodate different stages of substrate processing within the apparatus.

Collaborations

Lee’s listed coworkers include Geuno Jeong and Sungjoo An. The patent information connects his work with Samsung Electronics.

Conclusion

Janghee Lee’s patent focuses on a substrate-processing apparatus that defines separate regions for pretreatment and deposition, contributing to semiconductor manufacturing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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