The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Geuno Jeong, Incheon, KR;

Janghee Lee, Yongin-si, KR;

Sungjoo An, Yongin-si, KR;

Seran Oh, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); H10P 14/20 (2026.01); H10P 72/76 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3406 (2026.01); C23C 16/0209 (2013.01); C23C 16/0272 (2013.01); C23C 16/26 (2013.01); C23C 16/45563 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); H10P 14/36 (2026.01); H10P 72/7621 (2026.01);
Abstract

A substrate processing apparatus includes: configured to support a plurality of substrates; a chamber sidewall surrounding at least a side surface of the substrate support; and an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support. The plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support and a separation between at least two process regions of the plurality of process regions. The plurality of process regions include a pretreatment process region between the pretreatment process plate portion and the substrate support and having a first height, and a deposition process region between the deposition process plate portion and the substrate support and having a second height, greater than the first height.


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