Hwaseong-si, South Korea

Janggn Yun

USPTO Granted Patents = 5 

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 11(Granted Patents)


Location History:

  • Hwaseong-si, KR (2014 - 2023)
  • Suwon-si, KR (2022 - 2024)

Company Filing History:


Years Active: 2014-2025

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5 patents (USPTO):

Title: Innovator Spotlight: Janggn Yun

Introduction

Janggn Yun is a prominent inventor based in Hwaseong-si, South Korea, known for his significant contributions to the field of semiconductor technology. With a total of three patents to his name, Yun has made notable advancements that enhance semiconductor devices and their manufacturing processes.

Latest Patents

Janggn Yun's latest patents exemplify his innovative prowess within the semiconductor sector. One of his key inventions is titled "Semiconductor device including vertical memory structure." This groundbreaking patent describes a semiconductor device featuring a first stacked structure and a second stacked structure positioned on a substrate, interconnected by a series of separation structures and vertical memory structures. These components are meticulously arranged to optimize device performance, showcasing Yun's engineering expertise.

Another important patent is "Semiconductor device and method of manufacturing the same." This invention details a semiconductor device architecture comprising a substrate with distinct memory cell and connection regions, employing multiple gate electrodes. Notably, the architecture includes channel structures that extend vertically, enhancing the functionality of memory cells while improving the overall integration of the device.

Career Highlights

As part of Samsung Electronics Co., Ltd., Janggn Yun has solidified his reputation as a valuable asset in the technology industry. His ability to innovate within the competitive field of semiconductors has positioned him at the forefront of advancements in electronics.

Collaborations

Throughout his career, Yun has collaborated with esteemed colleagues such as Jaeduk Lee and Kwang Soo Seol. Their joint efforts in research and development have significantly contributed to the innovation of semiconductor technologies, further emphasizing the importance of teamwork in achieving technological breakthroughs.

Conclusion

Janggn Yun continues to pave the way for future innovations in semiconductor technology, with his patents reflecting a commitment to enhancing device functionality and performance. His work at Samsung Electronics Co., Ltd. and collaboration with notable peers highlight a promising trajectory for his contributions to the electronics sector. With each patent, Yun not only showcases his ingenuity but also reinforces the significance of innovation in driving technological advancement.

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