The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Oct. 16, 2012
Applicants:

Janggn Yun, Hwaseong-si, KR;

Kwang Soo Seol, Yongin-si, KR;

Jungdal Choi, Hwaseong-si, KR;

Inventors:

Janggn Yun, Hwaseong-si, KR;

Kwang Soo Seol, Yongin-si, KR;

Jungdal Choi, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

Three-dimensional (3D) semiconductor memory devices are provided. According to the 3D semiconductor memory device, a gate structure includes gate patterns and insulating patterns alternately stacked on a semiconductor substrate. A vertical active pattern penetrates the gate structure. A gate dielectric layer is disposed between a sidewall of the vertical active pattern and each of the gate patterns. A semiconductor pattern is disposed on the gate structure and is connected to the vertical active pattern. A string drain region is formed in a portion of the semiconductor pattern and is spaced apart from the vertical active pattern.


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