Cary, NC, United States of America

Jan Zieleman


Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2006-2009

Loading Chart...
8 patents (USPTO):Explore Patents

Title: Jan Zieleman: Innovator in DRAM Technology

Introduction

Jan Zieleman is a prominent inventor based in Cary, NC (US), known for his significant contributions to the field of dynamic random-access memory (DRAM) technology. With a total of 8 patents to his name, he has made remarkable advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Zieleman's latest patents include innovative solutions such as a "Test mode for programming rate and precharge time for DRAM activate-precharge cycle." This invention provides a programmable activate-precharge cycle for DRAM devices, generating activate and precharge signals based on a programmed rate and precharge time relative to the internal clock of the DRAM. These signals are coupled to the wordlines of the DRAM device and can be switched under internal or external control. Additionally, he has developed a "Random access memory including circuit to compress comparison results," which features an array of memory cells that store data, along with circuits designed to compare and compress test data and memory cell data.

Career Highlights

Jan Zieleman is currently employed at Infineon Technologies AG, where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern computing.

Collaborations

Throughout his career, Jan has collaborated with notable colleagues, including Norbert Rehm and Rath Ung, who contribute to the innovative environment at Infineon Technologies AG.

Conclusion

Jan Zieleman's contributions to DRAM technology exemplify his dedication to innovation and excellence in the field. His patents not only reflect his expertise but also pave the way for future advancements in memory technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…