Jan V Linde

Title: Jan V Linde: Innovator in Power MOSFET Technology

Introduction

Jan V Linde is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Jan V Linde holds a patent for the "Structure and fabrication of power MOSFETs, including termination." This patent describes a power MOSFET created from a semiconductor body that features a main active area and a peripheral termination area. The design includes a first insulating layer of substantially uniform thickness that lies over both the active and termination areas. The main polycrystalline portion is positioned largely above the active area, while peripheral polycrystalline segments are located above the termination area. The gate electrode contacts the main polycrystalline portion, and the source electrode connects to both the active and termination areas. This MOSFET is typically created using a five-mask process, which includes a defreckle etch performed after metal deposition and patterning.

Career Highlights

Jan V Linde is associated with Siliconix Incorporated, where he has contributed to the advancement of semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of power MOSFETs, which are widely used in various electronic devices.

Collaborations

Jan has collaborated with notable coworkers, including Fwu-Iuan Hshieh and Mike F Chang. Their combined expertise has fostered innovation and development in the semiconductor field.

Conclusion

Jan V Linde's contributions to power MOSFET technology exemplify his commitment to innovation in the semiconductor industry. His patent and work at Siliconix Incorporated highlight the importance of collaboration and creativity in advancing technology.