Jan Mye Sung

Title: Innovations of Jan Mye Sung in Semiconductor Technology

Introduction

Jan Mye Sung is a prominent inventor based in Yang Mei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM (Dynamic Random Access Memory) fabrication processes. With a total of six patents to his name, his work has advanced the efficiency and effectiveness of memory cell production.

Latest Patents

One of Jan Mye Sung's latest patents is titled "Design and a novel process for formation of DRAM bit line and capacitor." This innovative process involves creating two interlaced patterns of capacitor node contact holes and bit line contact holes using specific photolithographic masks. The method allows for the formation of these contact images in a thin polysilicon layer with minimal spacing, enhancing the overall design of DRAM cells. Another notable patent is the "Method for forming a capacitor with a multiple pillar structure." This invention outlines a technique for fabricating capacitors with pillars smaller than the resolution of standard photolithography tools. The method includes multiple embodiments for forming the pillars and patterning conductive layers, ultimately leading to the creation of a capacitor with a pillar structure.

Career Highlights

Jan Mye Sung is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in semiconductor manufacturing. His expertise in photolithography and etching processes has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Throughout his career, Jan has collaborated with notable colleagues such as Ing-Ruey Liaw and Ming-Hong Kuo. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in semiconductor research.

Conclusion

Jan Mye Sung's contributions to semiconductor technology, particularly in DRAM fabrication processes, highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to shape the future of memory technology.