logo

For the Inventor, By the Inventor

Waterford, NY, United States of America

James R Grandusky

This inventor holds 30 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Aluminum Nitride Crystals. Top assignee: Crystal Is, Inc.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James R Grandusky. Retrieved from https://idiyas.com/inventor/james-r-grandusky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 161(Granted Patents)


Location History:

  • Albany, NY (US) (2016)
  • Waterford, NY (US) (2011 - 2024)

Company Filing History:

goldMedal30 out of 96 
 
Crystal Is, Inc.
 patents

Years Active: 2011-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Aluminum Nitride
Urbach Energy
Deep-Ultraviolet
Photon Extraction
Single Crystals
Epitaxial Layers
Pseudomorphic Devices
Optoelectronic Devices
Thermal Treatment
Impurity Control
Seeded Growth
Graded Layers
30 patents (USPTO):Explore Patents
1. 12264410 - Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths (2025-04-01),
2. 12163250 - Control of basal plane dislocations in large aluminum nitride crystals (2024-12-10),
3. 11939700 - Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals (2024-03-26),
4. 11840773 - Aluminum nitride single crystals having controllable color and methods of forming them (2023-12-12),
5. 11555256 - Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths (2023-01-17),
6. 11515455 - Photon extraction from ultraviolet light-emitting devices (2022-11-29),
7. 11384449 - Two-stage seeded growth of large aluminum nitride single crystals (2022-07-12),
8. 11355664 - Aluminum nitride substrate removal for ultraviolet light-emitting devices (2022-06-07),
9. 11251330 - Pseudomorphic electronic and optoelectronic devices having planar contacts (2022-02-15),
10. 11168411 - Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals (2021-11-09),
11. 10971665 - Photon extraction from nitride ultraviolet light-emitting devices (2021-04-06),
12. 10854797 - Photon extraction from ultraviolet light-emitting devices (2020-12-01),
13. 10756234 - Aluminum nitride substrate removal for ultraviolet light-emitting devices (2020-08-25),
14. 10700237 - Ultraviolet light-emitting devices incorporating graded layers and compositional offsets (2020-06-30),
15. 10615322 - Photon extraction from nitride ultraviolet light-emitting devices (2020-04-07),

Title: The Inventor James R Grandusky

Introduction: James R Grandusky is a prolific inventor based in Waterford, NY, known for his groundbreaking contributions to various fields.

Latest Patents: James R Grandusky holds several patents in the areas of technology, healthcare, and consumer products, showcasing his diverse range of innovations.

Career Highlights: Throughout his career, James R Grandusky has demonstrated a keen ability to identify gaps in the market and develop unique solutions to address them. His innovative approach has led to the successful commercialization of several products.

Collaborations: James R Grandusky has collaborated with leading companies and research institutions to bring his inventions to life. His partnerships have been instrumental in advancing cutting-edge technologies and improving existing products.

Conclusion: James R Grandusky's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with a legacy that continues to inspire future generations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…