The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Feb. 24, 2023
Applicants:

Robert T. Bondokov, Watervliet, NY (US);

Sean P. Branagan, Green Island, NY (US);

James Grandusky, Green Island, NY (US);

Kasey Hogan, Green Island, NY (US);

Justin Mark, Green Island, NY (US);

Jianfeng Chen, Ballston Lake, NY (US);

Inventors:

Robert T. Bondokov, Watervliet, NY (US);

Sean P. Branagan, Green Island, NY (US);

James Grandusky, Green Island, NY (US);

Kasey Hogan, Green Island, NY (US);

Justin Mark, Green Island, NY (US);

Jianfeng Chen, Ballston Lake, NY (US);

Assignee:

Crystal IS, Inc., Green Island, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C01B 21/072 (2006.01); C30B 23/00 (2006.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); C01B 21/072 (2013.01); C01P 2002/84 (2013.01); C30B 23/002 (2013.01);
Abstract

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.


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