Kasey Hogan

Title: Kasey Hogan: Innovator in Aluminum Nitride Crystal Technology

Introduction

Kasey Hogan is a prominent inventor based in Green Island, NY (US). She has made significant contributions to the field of materials science, particularly in the development of aluminum nitride crystals. Her innovative work has led to advancements that are crucial for various applications in electronics and optoelectronics.

Latest Patents

Kasey Hogan holds a patent titled "Control of basal plane dislocations in large aluminum nitride crystals." This patent focuses on methods to rapidly diameter-expand aluminum nitride single crystals during growth. The resulting crystals exhibit low densities of basal plane dislocations and enhanced substrate versatility metrics, making them highly valuable in industrial applications. She has 1 patent to her name.

Career Highlights

Kasey Hogan is currently employed at Crystal IS, Inc., where she continues to push the boundaries of crystal growth technology. Her work has been instrumental in improving the quality and performance of aluminum nitride crystals, which are essential for high-performance electronic devices.

Collaborations

Throughout her career, Kasey has collaborated with notable colleagues, including Robert T Bondokov and Sean P Branagan. These partnerships have fostered a dynamic research environment that encourages innovation and the sharing of ideas.

Conclusion

Kasey Hogan's contributions to the field of aluminum nitride crystal technology highlight her role as a leading inventor. Her work not only advances scientific understanding but also paves the way for future innovations in electronics.