James Man-Fai Hong

Title: James Man-Fai Hong: Innovator in Power Semiconductor Technology

Introduction

James Man-Fai Hong is a notable inventor based in San Leandro, CA (US). He has made significant contributions to the field of power semiconductor technology. His innovative work has led to the development of a high-efficiency rectifier device, which is crucial for improving energy efficiency in various applications.

Latest Patents

James Man-Fai Hong holds 1 patent for his invention titled "High efficiency rectifier." This patent describes a high-efficiency power semiconductor rectifier device that comprises a δP++ layer, a P-body, an N-drift region, an N+ substrate, an anode, and a cathode. The method of fabricating this device involves several steps, including depositing the N-drift region on the N+ substrate, implanting boron into the N-drift region to create a P-body region, forming a layer of titanium silicide on the P-body region, and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide and the P-body region to create the δP++ layer of supersaturated P-doped silicon.

Career Highlights

James Man-Fai Hong is currently employed at Diodes Fabtech, Inc., where he continues to work on advancing semiconductor technologies. His expertise in the field has positioned him as a valuable asset to his company and the industry at large.

Collaborations

James has collaborated with several talented individuals, including Roman Hamerski and Zerui Chen. These collaborations have contributed to the successful development of innovative technologies in the semiconductor sector.

Conclusion

James Man-Fai Hong's contributions to power semiconductor technology exemplify the impact of innovation in enhancing energy efficiency. His work continues to influence the industry and inspire future advancements.