Diodes Fabtech, Inc.

James Man-Fai Hong

Christopher Daniel Hruska

Roman Hamerski

Timothy S Eastman

Johnny Duc Van Chiem

Zerui Chen

A high-efficiency power semiconductor rectifier device () comprising a &#x3b4;P++ layer (), a P-body (), an N-drift region (), an N+ substrate (), an anode (), and a cathode (). The method of fabricating the device () comprises the steps of depositing the N-drift region () on the N+ substrate (), implanting boron into the N-drift region () to create a P-body region (), forming a layer of titanium silicide () on the P-body region (), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide () and the P-body region () to create the &#x3b4;P++ layer () of supersaturated P-doped silicon.

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San Leandro, CA, United States of America

James Man-Fai Hong