This inventor holds 1 USPTO granted patent. Top assignee: University of Illinois. Active years: 1991.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1991
Title: Innovations of James Kolodzey
Introduction
James Kolodzey is an accomplished inventor based in Urbana, IL (US). He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
James Kolodzey holds 1 patent for his invention titled "Semiconductor device with controlled negative differential resistance." This innovative patent utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The invention allows for the control of the onset of negative differential resistance via the gate of the field effect transistor. In one embodiment, there is homojunction tunneling within a bipolar field effect structure.
Career Highlights
James Kolodzey is affiliated with the University of Illinois, where he continues to advance research in semiconductor devices. His work has garnered attention for its potential applications in various electronic systems.
Collaborations
One of his notable collaborators is Jean-Pierre Leburton, with whom he has worked on various projects related to semiconductor technology.
Conclusion
James Kolodzey's innovative contributions to semiconductor devices highlight his expertise and commitment to advancing technology in this field. His work continues to influence the development of efficient electronic systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile