The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 1991

Filed:

Oct. 14, 1988
Applicant:
Inventors:

Jean-Pierre Leburton, Urbana, IL (US);

James Kolodzey, Urbana, IL (US);

Assignee:

University of Illinois, Urbana, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 16 ; 357-4 ; 357 13 ;
Abstract

The disclosed invention utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The onset of negative differential resistance can be controlled via the gate of the field effect transistor. In one embodiment there is homojunction tunneling within a bipolar field effect structure.


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