James J White

Title: Innovations of James J White in Semiconductor Technology

Introduction

James J White is a notable inventor based in Ashton, California. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of stacked MOS devices. His innovative approach has led to advancements that enhance the performance and reliability of electronic circuits.

Latest Patents

James J White holds a patent for the "Fabrication of stacked MOS devices utilizing lateral seeding." This patent describes a process for manufacturing vertically integrated MOS devices and circuits. In this process, gate oxide and a gate are formed on a semiconductor substrate, such as silicon. A layer of polysilicon is deposited over the wafer, allowing it to contact the substrate silicon through a window in the gate oxide. The substrate silicon and polysilicon are then laser melted and cooled under conditions that promote crystal seeding from the substrate into the polysilicon over the gate. This innovative method helps avoid the risk of dopant diffusion into the device channel regions by introducing source and drain dopants after melt-associated seeding of the polysilicon.

Career Highlights

James J White has worked with Northern Telecom Limited, where he has applied his expertise in semiconductor fabrication. His work has contributed to the development of advanced electronic devices that are essential in modern technology. His patent reflects his commitment to improving manufacturing processes in the semiconductor industry.

Collaborations

James has collaborated with notable colleagues such as Thomas W Macelwee and Iain D Calder. Their combined efforts have fostered innovation and progress in the field of semiconductor technology.

Conclusion

James J White's contributions to semiconductor technology through his innovative patent demonstrate his significant role in advancing electronic device manufacturing. His work continues to influence the industry and pave the way for future innovations.