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Melbourne Village, FL, United States of America

James Douglas Beasom

This inventor holds 125 USPTO granted patents, plus 1 CIPO patent and 2 EPO patents, primarily in Bipolar Transistors (CPC class 357 22). Top assignees: Harris Corporation, Intersil Americas Inc., Intersil Corporation. Active years: 1976-2015.

USPTO Granted Patents = 125

% Patents Active = 76.0

CIPO Patents = 1

EPO Patents = 2

Average Co-Inventor Count = 1.1

ph-index = 19

Forward Citations = 1,409(Granted Patents)

Forward Citations (Not Self Cited) = 1,252(Dec 10, 2025)

Inventors with similar research interests:

Jun Ichi Nishizawa

Location History:

Indian Harbour Beach, FL (US) (1976)
Melb. Village, FL (US) (1990)
Melbourne Beach, FL (US) (1998)
Melbourne, FL (US) (1978 - 2013)
Melbourne Village, FL (US) (1987 - 2015)

Company Filing History:

Intersil Americas Inc.

Fairchild Semiconductor Corporation

patents

5. 2 out of 834,411

Other

patents

where one patent can have more than one assignee

Years Active: 1976-2015

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Areas of Expertise:

Bipolar Transistor

MOSFET Structure

Thin Film Resistors

Depletable Collector

Integrated Circuit

Charge Storage Diode

Lateral DMOS

Device Wafer

Reduced Mask Count

Silicides

PN Junction Diode

Variable Value Resistors

125 patents (USPTO):Sort by Forward CitationsExplore Patents

1. RE45814 - PMOS depletable drain extension made from NMOS dual depletable drain extensions (2015-11-23),

2. 9111955 - Base for a NPN bipolar transistor (2015-08-18),

3. RE44730 - Method of manufacturing a MOSFET structure (2014-01-27),

4. RE44720 - Method of manufacturing a MOSFET structure (2014-01-20),

5. RE44430 - PMOS depletable drain extension made from NMOS dual depletable drain extensions (2013-08-12),

6. RE44140 - Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns (2013-04-08),

7. 8338914 - Integrated process for thin film resistors with silicides (2012-12-25),

8. RE43042 - Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns (2011-12-26),

9. 7973360 - Depletable cathode low charge storage diode (2011-07-05),

10. 7829954 - PMOS depletable drain extension made from NMOS dual depletable drain extensions (2010-11-09),

11. RE41477 - Semiconductor device with a reduced mask count buried layer (2010-08-09),

12. 7759728 - Depletable cathode low charge storage diode (2010-07-20),

13. 7687336 - Method of manufacturing a MOSFET structure (2010-03-30),

14. 7662692 - Integrated process for thin film resistors with silicides (2010-02-16),

15. 7655515 - Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide (2010-02-02),

Title: The Innovative Journey of James Douglas Beasom

Introduction: James Douglas Beasom, a visionary inventor based in Melbourne Village, FL (US), has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: James Douglas Beasom holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, James Douglas Beasom has established himself as a prolific inventor with a keen eye for identifying gaps in the market and developing cutting-edge solutions. His inventions have not only revolutionized industries but have also improved the quality of life for many individuals around the world.

Collaborations: Throughout his career, James Douglas Beasom has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: James Douglas Beasom's relentless pursuit of innovation and his passion for creating solutions to complex problems have solidified his position as a respected inventor in the technology sector. His dedication to pushing the boundaries of what is possible continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.

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