The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jan. 19, 2010
John T. Gasner, Satellite Beach, FL (US);
John Stanton, Palm Bay, FL (US);
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
James D. Beasom, Melbourne Village, FL (US);
John T. Gasner, Satellite Beach, FL (US);
John Stanton, Palm Bay, FL (US);
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
James D. Beasom, Melbourne Village, FL (US);
Intersil Americas Inc., Milpitas, CA (US);
Abstract
The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.