Company Filing History:
Years Active: 1984-1985
Title: The Innovative Contributions of James C. Hwang
Introduction
James C. Hwang is a notable inventor based in Berkeley Heights, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving deposition processes and the fabrication of high-purity semiconductor materials.
Latest Patents
One of Hwang's latest patents is titled "Method of substrate heating for deposition processes." This invention achieves strain-free mounting and uniform heating of deposition substrates by coating the backside of substrates, such as GaAs, with a reflective layer. The reflective environment created by materials like tantalum foils allows for multiple reflections, resulting in uniform heating of the substrate. Another significant patent is "III-V Based semiconductor devices and a process for fabrication." This patent describes a specific molecular beam epitaxy (MBE) process that produces extremely high-purity and defect-free layers of III-V semiconductor materials. The process involves protecting the deposition substrate with a passivating surface and treating it with an arsenic-containing gas before initiating MBE growth in an arsenic-rich environment.
Career Highlights
Throughout his career, James C. Hwang has worked with prestigious organizations, including AT&T Bell Laboratories and Bell Telephone Laboratories. His experience in these institutions has allowed him to contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Hwang has collaborated with several notable individuals in his field, including James Vincent DiLorenzo and William Charles Niehaus. These collaborations have further enriched his work and innovations.
Conclusion
James C. Hwang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods continue to influence the development of high-purity semiconductor materials and deposition processes.
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