The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1985
Filed:
May. 07, 1982
Applicant:
Inventor:
James C Hwang, Berkeley Heights, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29575 ; 29580 ; 2957 / ; 148-15 ; 148175 ; 148176 ;
Abstract
Extremely high-purity and defect-free layers of III-V semiconductor materials are produced by a specific MBE process. This process as applied to GaAs includes protecting the deposition substrate with a passivating surface, removing this surface in situ, treating the bared substrate heated to a temperature below its incongruent melting point with an arsenic-containing gas, and initiating the MBE growth in an environment containing an excess of arsenic over gallium.