James C Gallagher

Title: **Innovative Contributions of James C. Gallagher in GaN Technology**

Introduction

James C. Gallagher, an accomplished inventor based in Alexandria, VA, has made significant contributions to the field of semiconductor technology, particularly in gallium nitride (GaN) devices. With a total of four patents to his name, Gallagher focuses on innovative methods that enhance the performance and reliability of GaN materials.

Latest Patents

Gallagher's latest patent, titled "GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same," outlines a novel procedure for activating implanted dopants and repairing damage to dopant-implanted GaN. This process involves the following key steps: a GaN substrate is implanted with either n-type or p-type ions and subjected to a high-temperature annealing process. This method results in planar n- or p-type doped areas within the GaN, with an activated dopant concentration of about 10^-10 cm.

Moreover, an initial annealing step at a stable temperature can be performed prior to the high-temperature anneal. This method also incorporates a thermally stable cap to prevent nitrogen evolution from the GaN surface during the high-temperature annealing phase. To further enhance the stability of the GaN, the annealing may be conducted under nitrogen pressure, utilizing techniques such as laser annealing or rapid thermal annealing (RTA).

Career Highlights

Gallagher is currently employed at the United States of America, as represented by the Secretary of the Navy. His work has focused on advancing GaN technology, contributing to military and commercial applications that require durable and high-performance semiconductor devices.

Collaborations

In his innovative endeavors, Gallagher collaborates with talented colleagues such as Travis J. Anderson and Marko J. Tadjer. This teamwork has fostered a rich exchange of ideas, further propelling advancements in semiconductor technology and its applications.

Conclusion

James C. Gallagher stands out as a notable inventor in the semiconductor industry, particularly for his advancements in GaN technology. His commitment to innovation is apparent in his patents and collaborative efforts, which continue to drive forward the capabilities of modern electronic devices. As technology evolves, Gallagher’s contributions will undoubtedly play a crucial role in shaping the future of semiconductor applications.