The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Mar. 01, 2023
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Travis J. Anderson, Alexandria, VA (US);
James C. Gallagher, Alexandria, VA (US);
Marko J. Tadjer, Vienna, VA (US);
Alan G. Jacobs, Arlington, VA (US);
Boris N. Feigelson, Springfield, VA (US);
Abstract
A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 10-10cm. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under Npressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).