This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Jam-Wem Lee and Semiconductor ESD Protection
Introduction
Jam-Wem Lee is an inventor based in Hsinchu City, Taiwan. His work includes a patent for a semiconductor device designed with multiple electrostatic discharge (ESD) paths. Lee is associated with Taiwan Semiconductor Manufacturing Co., Ltd.
Latest Patents
Lee is named on one patent, titled “Semiconductor Device Having Multiple Electrostatic Discharge (ESD) Paths.” The invention describes a semiconductor structure that uses doped regions and wells to form an ESD path between an input/output pad and a voltage terminal. This arrangement is designed to help protect semiconductor circuitry from electrostatic discharge.
Career Highlights
Lee’s patent reflects work on semiconductor-device protection and circuit design. The described structure combines diode terminals, doped regions, and surrounding wells to provide an ESD discharge route.
Collaborations
Lee’s listed coworkers include PO-Lin Peng and Li-Wei Chu. The patent information provided does not specify their roles or contributions to this invention.
Conclusion
Jam-Wem Lee’s patent focuses on a semiconductor device with multiple ESD paths, highlighting his contribution to circuit-protection technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile