Tucson, AZ, United States of America

Jakob Hans Hohl

This inventor holds 3 USPTO granted patents. Top assignee: Other. Active years: 1994-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jakob Hans Hohl. Retrieved from https://idiyas.com/inventor/jakob-hans-hohl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 33.3

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 86(Granted Patents)


Location History:

  • Tucson, AZ (US) (1994)
  • Tuscon, AZ (US) (2006 - 2008)

Company Filing History:

goldMedal3 out of 834,570 
Other
 patents

Years Active: 1994-2008

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3 patents (USPTO):Explore Patents

Title: Innovations by Jakob Hans Hohl

Introduction

Jakob Hans Hohl is an accomplished inventor based in Tucson, AZ. He has made significant contributions to the field of microelectronics, particularly in the development of advanced static random access memory (SRAM) cell structures. With a total of 3 patents to his name, Hohl continues to push the boundaries of technology.

Latest Patents

Hohl's latest patents include groundbreaking work on a lamellar-derived microelectronic component array and a vertically wired integrated circuit. The first patent describes sub-lithographic lamella and pillar structures defined by larger lines or lamellae. It details the creation of a three-dimensional SRAM cell structure as a vertical stack of wired transistors fabricated from crystalline silicon. This innovative design allows for the creation of a three-dimensional cell integrated circuit using a single mask step. Various structural features and methods of fabrication are elaborated upon, including peripheral interfaces and supplemental techniques.

The second patent also focuses on a three-dimensional SRAM cell structure, emphasizing the vertical stack of wired transistors. Similar to the first patent, it highlights the use of crystalline silicon and the ability to create a circuit along the walls of a vertical pillar. The detailed description includes various structural features and methods of fabrication, showcasing Hohl's expertise in this area.

Career Highlights

Throughout his career, Jakob Hans Hohl has demonstrated a commitment to innovation in microelectronics. His work has not only advanced the field but has also paved the way for future developments in integrated circuit technology.

Collaborations

Hohl has collaborated with notable individuals in the industry, including Walter Richard Buerger, Jr. and Mary Lundgren Long. These partnerships have contributed to the success of his projects and the advancement of technology in microelectronics.

Conclusion

Jakob Hans Hohl is a prominent inventor whose work in microelectronics has led to significant advancements in SRAM technology. His innovative patents reflect his dedication to pushing the boundaries of what is possible in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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