Location History:
- Sungnam, JP (2004)
- Sungnam, KR (2004)
- Seoul, KR (2013)
Company Filing History:
Years Active: 2004-2013
Title: Innovations of Jae-Young Ahn
Introduction
Jae-Young Ahn is a notable inventor based in Sungnam, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, Ahn's work focuses on advanced manufacturing methods that enhance the efficiency and performance of semiconductor devices.
Latest Patents
Ahn's latest patents include a method of manufacturing a gate structure and a method of manufacturing a semiconductor device that incorporates this structure. In this innovative method, a silicon oxide layer is formed on a substrate, which is then treated with a solution containing ozone. Following this treatment, a conductive layer is applied to the silicon oxide layer. Another significant patent involves a method for forming a thin film using an atomic layer deposition (ALD) process. This method entails supplying reactive materials to a chamber containing a wafer, allowing for the formation of a ternary thin film, specifically a SiBN film, through a series of precise steps.
Career Highlights
Ahn is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing methods that improve the manufacturing processes of semiconductor devices.
Collaborations
Some of Ahn's coworkers include Young-Seok Kim and Yong-Woo Hyung, who contribute to the innovative environment at Samsung Electronics.
Conclusion
Jae-Young Ahn's contributions to semiconductor technology through his patents and work at Samsung Electronics highlight his role as a leading inventor in the field. His innovative methods are paving the way for advancements in semiconductor manufacturing.