Samsung Electronics Co., Ltd.

Jae-Young Ahn

Young-Seok Kim

Yong-Woo Hyung

Ki-Hyun Hwang

Jung-Hyun Park

Man-Sug Kang

Chang-Sup Mun

Won-Jun Jang

Man-Sung Kang

In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.

Method of manufacturing gate structure and method of manufacturing semiconductor device including the same

A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.

Method for forming a thin film using an atomic layer deposition (ALD) process

Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same

Growing community of inventors

Sungnam, Japan

Jae-Young Ahn