The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 09, 2010
Applicants:
Ki-hyun Hwang, Seongnam-si, KR;
Won-jun Jang, Seoul, KR;
Jae-young Ahn, Seoul, KR;
Chang-sup Mun, Suwon-si, KR;
Jung-hyun Park, Seoul, KR;
Inventors:
Ki-Hyun Hwang, Seongnam-si, KR;
Won-Jun Jang, Seoul, KR;
Jae-Young Ahn, Seoul, KR;
Chang-Sup Mun, Suwon-si, KR;
Jung-Hyun Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.
Quick Actions:
Hwang, Ki-Hyun. (2013). Method of manufacturing gate structure and method of manufacturing semiconductor device including the same (U.S. Patent No. 8592269). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8592269
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile