Company Filing History:
Years Active: 2001
Title: Jae Sung Roh: Innovator in Semiconductor Technology
Introduction
Jae Sung Roh is a prominent inventor based in Kyonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approaches to fabricating transistors and contact pads.
Latest Patents
One of his latest patents is a "Method for fabricating MOS transistor having dual gate." This invention focuses on minimizing impurity channeling and diffusion during the impurity injection and activation processes. The method involves forming a first and second conduction type well in a semiconductor substrate, followed by the deposition of a gate oxide film and polysilicon layer. The process includes selective removal of portions of these layers to create gate electrodes, injecting impurity ions, and conducting heat treatments to diffuse the impurities effectively.
Another notable patent is the "Method for fabricating contact pad for semiconductor device." This method outlines the steps for forming device isolation layers in a semiconductor substrate, defining active regions, and conducting epitaxial growth to create storage node and bitline contact pads. The innovative approach allows for efficient fabrication of semiconductor devices.
Career Highlights
Jae Sung Roh has worked with notable companies in the semiconductor industry, including Hyundai Microelectronics Co., Ltd. and Hyundai Electronics Industries Co. Ltd. His experience in these organizations has contributed to his expertise in semiconductor fabrication techniques.
Collaborations
Throughout his career, Jae Sung Roh has collaborated with talented individuals such as Sang Hyun Kim and Bong Soo Kim. These collaborations have likely enriched his work and led to advancements in semiconductor technology.
Conclusion
Jae Sung Roh's contributions to semiconductor technology through his patents and career experiences highlight his role as an innovator in the field. His work continues to influence the development of advanced semiconductor devices.