The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Sep. 16, 1999
Hyundai Micro Electronics Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A method for fabricating a contact pad for a semiconductor device, including the steps of forming device isolation layers in a semiconductor substrate to define active regions, forming a plurality of wordlines crossing the active regions, forming an insulating layer on an entire surface, and selectively removing the insulating layer on storage node contact regions, a bitline contact region, and the device isolation layer in contact with the bitline contact region, so as to form an epitaxial growth blocking layer, and conducting an epitaxial growth using the epitaxial growth blocking layer as a mask, to form a storage node contact pad as well as a bitline contact pad by causing an epitaxial layer grown in the bitline contact region to extend laterally toward the device isolation layer.