This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: University of Illinois. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Jae Kwon Lee: Innovator in Gallium Nitride Technology
Introduction
Jae Kwon Lee is a prominent inventor based in Champaign, IL (US). He has made significant contributions to the field of semiconductor technology, particularly in the synthesis of gallium nitride (GaN) structures.
Latest Patents
Jae Kwon Lee holds a patent for "Large area synthesis of cubic phase gallium nitride on silicon." This innovative patent describes a wafer that includes a buried substrate and a first layer of silicon (100) with silicon sidewalls (111) forming U-shaped grooves. The patent further details a second layer of patterned oxide and a third layer of a buffer covering the first layer. Additionally, multiple GaN-based structures are disposed within the U-shaped grooves, featuring cubic gallium nitride formed at merged growth fronts of hexagonal gallium nitride.
Career Highlights
Jae Kwon Lee is affiliated with the University of Illinois, where he continues to advance research in semiconductor materials. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
He has collaborated with notable colleagues, including Can Bayram and Muhammad Ali Johar, contributing to the advancement of research in his field.
Conclusion
Jae Kwon Lee's innovative work in gallium nitride technology exemplifies the impact of research and development in semiconductor materials. His contributions continue to shape the future of electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile