Gyeonggi-do, South Korea

Jae Hoon Park

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semes Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae Hoon Park. Retrieved from https://idiyas.com/inventor/jae-hoon-park-6pld7txw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jae Hoon Park and Substrate-Treating Technology.

Introduction

Jae Hoon Park is an inventor based in Gyeonggi-do, South Korea, and is associated with Semes Co., Ltd. His listed patent concerns equipment for treating substrates.

Latest Patents

Park’s listed patent, “Substrate Treating Apparatus,” describes a spin chuck that supports a substrate, a unit that supplies rinse liquid, and a bowl surrounding the chuck. The bowl includes a first bowl with a downward-outward inclined surface and a curved portion of its upper surface, along with an upper base. Together, the bowl and base form a flow passage that follows an arc along the first bowl’s upper surface and directs rinse liquid toward its inclined surface. Park is credited with 1 patent.

Career Highlights

The available information associates Park with Semes Co., Ltd. and identifies his work on substrate-treatment apparatus technology. The patent describes a bowl and flow-passage arrangement for delivering rinse liquid during substrate processing.

Collaborations

Park’s listed coworkers include Nam Kyu Kim and Young Seo An. The provided information does not specify their roles or the nature of their collaboration.

Conclusion

Jae Hoon Park’s listed invention focuses on directing rinse liquid through a curved passage in a substrate-treating apparatus, reflecting his documented contribution to semiconductor-processing equipment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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