Icheon, South Korea

Jae Ho Kim

This inventor holds 8 USPTO granted patents and 15 published patent applications. Top assignee: Skhynix Inc.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae Ho Kim. Retrieved from https://idiyas.com/inventor/jae-ho-kim-esukrqld

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 75.0

Average Co-Inventor Count = 1.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2025-2026

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8 patents (USPTO):Explore Patents

Title: Jae Ho Kim: Innovator in Semiconductor Technology

Introduction

Jae Ho Kim is a prominent inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances manufacturing processes.

Latest Patents

Jae Ho Kim holds a patent for a semiconductor device and the method for manufacturing this device. The patent describes a semiconductor device that includes a stack with a first plane edge region, a second plane edge region, and a contact region located between these two edge regions. Additionally, the device features a first insulating structure with portions strategically located in each region, including a first curved edge in the first portion.

Career Highlights

Jae Ho Kim is associated with SK Hynix Inc., a leading company in the semiconductor industry. His role at the company has allowed him to work on cutting-edge technologies that drive advancements in semiconductor manufacturing.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Jae Ho Kim's contributions to semiconductor technology exemplify the innovative spirit of modern inventors. His patent reflects a significant advancement in the field, showcasing his expertise and commitment to technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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