The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777641 B1

Date of Patent:

Oct. 27, 2026

Filed:

Dec. 07, 2022

Semiconductor device having discharge contact structure and method of manufacturing the same

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jae Ho Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

WILLIAM PARK AND ASSOCIATES LTD.

Primary Examiner:

Kevin Parendo

Int. Cl.

CPC ...

H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 42/60 (2026.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 41/50 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H10W 20/054 (2026.01); H10W 20/435 (2026.01); H10W 42/60 (2026.01);

Abstract

A semiconductor device, and a method for manufacturing the semiconductor device, includes a discharge interconnection structure and a source structure on the discharge interconnection structure. The semiconductor device also includes a first discharge contact structure extending through the source structure to be electrically connected to the discharge interconnection structure, the first discharge contact structure having a first depth. The semiconductor device further includes a second discharge contact structure positioned in the source structure, the second discharge contact structure having a second depth different from the first depth.

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Kim, Jae. (2026). Semiconductor device having discharge contact structure and method of manufacturing the same (U.S. Patent No. 12777641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777641

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