Disan, South Korea

Jae Gug Ryu

This inventor holds 1 USPTO granted patent. Top assignee: Ulsan Chemical Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae Gug Ryu. Retrieved from https://idiyas.com/inventor/jae-gug-ryu-j9razrai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Innovations of Jae Gug Ryu in Semiconductor Processes

Introduction

Jae Gug Ryu is a notable inventor based in Disan, South Korea. He has made significant contributions to the field of semiconductor processes, particularly through his innovative patent related to dry-etching gases.

Latest Patents

Jae Gug Ryu holds a patent for a method titled "Dry-etching gas for semiconductor process and preparation method thereof." This invention focuses on the continuous preparation of highly pure octafluorocyclopentene, which is essential for dry-etching processes. The method involves reacting octachlorocyclopentene with potassium fluoride (KF) in a continuous manner, followed by the purification of crude octafluorocyclopentene. The resulting gaseous composition boasts an impressive purity level, containing 99.995 vol % or higher of octafluorocyclopentene, with minimal impurities.

Career Highlights

Jae Gug Ryu is currently employed at Ulsan Chemical Co., Ltd., where he continues to develop innovative solutions in the semiconductor industry. His work has been instrumental in enhancing the efficiency and effectiveness of dry-etching processes.

Collaborations

Throughout his career, Jae Gug Ryu has collaborated with esteemed colleagues, including Hae Seok Ji and Ook Jae Cho. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Jae Gug Ryu's contributions to the semiconductor industry through his innovative patent demonstrate his expertise and commitment to advancing technology. His work not only enhances the efficiency of semiconductor processes but also sets a standard for future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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