Plano, TX, United States of America

Jack G Qian

This inventor holds 3 USPTO granted patents and 4 published patent applications. Top assignees: Texas Instruments Corporation, Dallas Semiconductor Corporation. Active years: 2001-2019.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 2001-2019

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jack G Qian

Introduction

Jack G Qian is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of non-volatile memory technology. With a total of 3 patents to his name, Qian's work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is for a programmable non-volatile memory with low off current. In this invention, a non-volatile memory cell is constructed using a floating gate transistor with a channel that includes a buried channel region interposed between two surface channel regions under a floating gate. The design aims to increase the energy barrier along the channel and reduce off-state current of the memory cell. Another significant patent is for an n-channel erasable programmable non-volatile memory. This invention discloses a method of fabricating a floating-gate NMOSFET, utilizing a silicide blocking layer to form an insulator on top of a poly-silicon gate, allowing for long-term charge storage after programming.

Career Highlights

Throughout his career, Jack G Qian has worked with prominent companies such as Texas Instruments Corporation and Dallas Semiconductor Corporation. His experience in these organizations has contributed to his expertise in memory technology and semiconductor design.

Collaborations

Jack has collaborated with talented individuals in the field, including Varun Singh and Tanmay Kumar. Their joint efforts have further advanced the innovations in non-volatile memory technologies.

Conclusion

Jack G Qian's contributions to the field of non-volatile memory technology are noteworthy. His patents reflect a deep understanding of semiconductor design and innovation. His work continues to influence advancements in memory technology, showcasing the importance of inventors in driving progress.

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