The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Apr. 26, 2000
Varun Singh, Dallas, TX (US);
Tanmay Kumar, Denton, TX (US);
Thomas E. Harrington, III, Carrollton, TX (US);
Roy Austin Hensley, Plano, TX (US);
Allan T. Mitchell, Heath, TX (US);
Jack Gang Qian, Plano, TX (US);
Dallas Semiconductor Corporation, Dallas, TX (US);
Abstract
A polysilicon resistor is formed using a late implant process. Low dopant concentrations on the order of 6×10,to 3.75×10,have shown good results. with a reduced post anneal temperature. Both the first and second order temperature coefficients (TC1 and TC2) can then be adjusted. Using electrical trimming resistors can be produced with highly linear temperature characteristics. By varying the geometries of the resistors, low trimming threshold current densities and voltages can be used to produce good results.