Iwen Hsu

Title: The Innovative Contributions of Iwen Hsu

Introduction

Iwen Hsu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to oxide layer formation.

Latest Patents

Iwen Hsu holds a patent for a technology titled "Remote Plasma Oxide Layer." This invention involves a remotely generated plasma that energizes radicals of a process gas. The radicals interact with a precursor gas, causing a reaction that forms an oxide on a region of a workpiece. Importantly, this process allows for the formation of the oxide without damaging an underlying layer, such as a low-k dielectric layer. The oxide layer is particularly relevant in the context of FinFET device fabrication, where it corresponds to a main sidewall oxide over a gate spacer.

Career Highlights

Iwen Hsu is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading player in the semiconductor industry. His work focuses on advancing technologies that enhance the efficiency and performance of semiconductor devices.

Collaborations

Iwen collaborates with various professionals in his field, including his coworker Jei Ming Chen. Their combined expertise contributes to the innovative environment at Taiwan Semiconductor Manufacturing Company Ltd.

Conclusion

Iwen Hsu's contributions to semiconductor technology, particularly through his patent on remote plasma oxide layers, highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced semiconductor devices.