The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Apr. 02, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Iwen Hsu, Hsinchu, TW;
Jei Ming Chen, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/02252 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01);
Abstract
A remotely generated plasma energizes radicals of a process gas. The radicals of the process gas may interact with a precursor gas to cause a reaction to form an oxide on a region of a workpiece. The formation of the oxide is formed without damaging an underlying layer, such as a low-k dielectric layer. The oxide layer may correspond to a main sidewall oxide over a gate spacer in the formation of a FinFET device.