Kawasaki, Japan

Iwao Higashinakagawa

This inventor holds 3 USPTO granted patents. Top assignees: Agency of Industrial Science and Technology, Vlsi Technology Research Association. Active years: 1981-1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Iwao Higashinakagawa. Retrieved from https://idiyas.com/inventor/iwao-higashinakagawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 34(Granted Patents)


Company Filing History:


Years Active: 1981-1988

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3 patents (USPTO):Explore Patents

Title: Iwao Higashinakagawa: Innovator in Semiconductor Technology

Introduction

Iwao Higashinakagawa is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of single crystal semiconductor layers. With a total of 3 patents to his name, his work has had a lasting impact on the industry.

Latest Patents

Higashinakagawa's latest patents focus on methods for forming single crystal semiconductor layers from non-single-crystalline semiconductor materials. One of his innovative approaches involves an apparatus that utilizes an electron beam to scan a region of the material. This apparatus includes a first pair of deflection electrodes and a second pair of deflection electrodes, both positioned in the path of the electron beam. A deflection signal is generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal. This allows the first pair of electrodes to rapidly deflect the electron beam in one direction while changing the range of deflection. Simultaneously, the second pair of electrodes deflects the beam in another direction, effectively annealing a region of the material to create a single crystal semiconductor layer.

Career Highlights

Throughout his career, Iwao Higashinakagawa has worked with prominent organizations such as the Agency of Industrial Science and Technology and the VLSI Technology Research Association. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Higashinakagawa has collaborated with notable colleagues, including Tomoyasu Inoue and Hiroyuki Tango. These partnerships have further enhanced his research and development efforts in the semiconductor field.

Conclusion

Iwao Higashinakagawa's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods for forming single crystal semiconductor layers continue to shape the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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