The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1981
Filed:
Apr. 29, 1980
Applicant:
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 89 ; 156653 ; 156657 ; 2041 / ; 357 67 ; 427 90 ; 427 91 ; 427 93 ; 427 94 ; 427 39 ;
Abstract
A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.
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Higashinakagawa, Iwao. (1981). Method of manufacturing a semiconductor device by forming a tungsten (U.S. Patent No. 4283439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4283439
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile