Hamburg, Germany

Ivan Shiu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nexperia B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ivan Shiu. Retrieved from https://idiyas.com/inventor/ivan-shiu-1r62ok75

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ivan Shiu - Innovator in Semiconductor Technology

Introduction

Ivan Shiu is a notable inventor based in Hamburg, Germany. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor package assembly that incorporates electric field modulation structures.

Latest Patents

Ivan Shiu holds a patent for a semiconductor package assembly with electric field modulation structures. This invention includes a lead frame with a first and second side, a semiconductor die structure mounted on the lead frame, and a molding resin case that encapsulates the die structure and lead frame. The design allows for the modulation of electric fields between connections, enhancing the performance of semiconductor devices. He has 1 patent to his name.

Career Highlights

Ivan is currently employed at Nexperia B.V., a company known for its expertise in semiconductor solutions. His work at Nexperia has positioned him as a key player in advancing semiconductor packaging technologies.

Collaborations

Ivan collaborates with Tim Böttcher, a fellow innovator in the field. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Ivan Shiu's contributions to semiconductor technology exemplify the spirit of innovation. His patent for a semiconductor package assembly showcases his commitment to enhancing electronic device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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