Bakersfield, VT, United States of America

Ivan J Stone

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2006-2007.


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: The Innovations of Ivan J Stone

Introduction

Ivan J Stone is a notable inventor based in Bakersfield, Vermont, who has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Stone has demonstrated a commitment to advancing the capabilities of semiconductor manufacturing.

Latest Patents

Stone's latest patents focus on methods for enhancing semiconductor wafer production. One of his key inventions is a method for making a wafer that involves providing a substrate with a first surface, an opposite second surface, and at least one side edge defining the substrate's thickness. The process includes applying a fluid to the first surface and the first peripheral region of the side edge, followed by the removal of the opposite second surface and the second peripheral region to create a third surface. This innovative approach also leads to the production of a semiconductor chip derived from the wafer-making method.

Career Highlights

Throughout his career, Ivan J Stone has been associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop cutting-edge technologies in the semiconductor industry.

Collaborations

Stone has collaborated with notable colleagues, including Rene A Lamothe and Donald W Brouillette, who have contributed to his innovative projects and research endeavors.

Conclusion

Ivan J Stone's contributions to semiconductor technology through his patents and work at IBM highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
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