Mie, Japan

Itsuko Sakai

This inventor holds 2 USPTO granted patents. Top assignee: Toshiba Memory Corporation. Active years: 2018-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Itsuko Sakai. Retrieved from https://idiyas.com/inventor/itsuko-sakai-y00o4e8r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Location History:

  • Kuwana Mie, JP (2018)
  • Mie, JP (2020)

Company Filing History:


Years Active: 2018-2020

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2 patents (USPTO):Explore Patents

Title: Innovations of Itsuko Sakai

Introduction

Itsuko Sakai is a prominent inventor based in Mie, Japan. She has made significant contributions to the field of semiconductor manufacturing, holding a total of 2 patents. Her work focuses on advanced plasma processing techniques that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

One of her latest patents is a plasma processing apparatus and method. This invention includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing part is designed to introduce gas into the chamber, while the first power source outputs a first voltage to generate ions from the gas. The holder is responsible for holding a substrate, and the electrode, which is opposite to the ions across the substrate, has a surface that is not parallel to the substrate. The second power source applies a second voltage to the electrode, which has a frequency lower than that of the first voltage, thereby introducing ions to the substrate.

Another significant patent is a method for manufacturing semiconductor devices. This method involves forming a hole extending in a first direction in a workpiece. It includes forming a first film on the upper surface of the workpiece and the upper portion of the side wall of the hole. A second film is then formed on the first film. Portions of the first and second films are removed from the upper surface of the workpiece, ensuring that at least part of the films on the upper portion remain. The method also includes removing a portion of the workpiece exposed through the hole using a second etchant, with the etching rate of the first etchant for the first film being higher than that for the second film.

Career Highlights

Itsuko Sakai is currently employed at Toshiba Memory Corporation, where she continues to innovate and develop new technologies in semiconductor manufacturing. Her expertise in plasma processing has positioned her as a key player in her field.

Collaborations

She collaborates with notable colleagues, including Yosuke Sato and Akio Ui, who contribute to her research and development efforts.

Conclusion

Itsuko Sakai's contributions to the field of semiconductor technology through her innovative patents and work at Toshiba Memory Corporation highlight her importance as an inventor. Her advancements in plasma processing methods are paving the way for future developments in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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