The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Feb. 23, 2017
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Assignee:
Toshiba Memory Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/00 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32541 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing part introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.