Company Filing History:
Years Active: 2004
Title: **Isabelle Guilmeau: Innovator in MOS Transistor Fabrication**
Introduction
Isabelle Guilmeau is a prominent inventor based in Grenoble, France, known for her contributions to the field of semiconductor technology. With a focus on innovation in the design and fabrication of transistors, Guilmeau has made significant strides in enhancing electronic devices.
Latest Patents
Guilmeau holds a patent titled "Process for fabricating a MOS transistor of short gate length and integrated circuit comprising such a transistor." This groundbreaking patent outlines a method for fabricating a transistor. The process involves producing source and drain extension regions by forming a gate region on a semiconductor substrate and implanting dopants into the semiconductor substrate on either side of the gate. Additionally, the production of these regions includes the formation of an intermediate layer on the sidewalls of the gate and the surface of the semiconductor substrate. This intermediate layer is made from a material that is less dense than silicon dioxide, allowing for effective implantation of dopants through this layer.
Career Highlights
Guilmeau's career is marked by her position at STMicroelectronics, a renowned company in the semiconductor industry. Her work has contributed to the advancement of transistor technology, which is crucial for the development of modern electronic circuits. Her dedication to research and innovation in this field has garnered recognition among her peers.
Collaborations
Throughout her career, Guilmeau has collaborated with talented professionals in her field, including her coworker Damien Lenoble. Together, they have worked on innovative projects that push the boundaries of current semiconductor technologies.
Conclusion
Isabelle Guilmeau's work in MOS transistor fabrication exemplifies the spirit of innovation that drives the semiconductor industry forward. With her patent and contributions at STMicroelectronics, she continues to play a vital role in the advancement of technology that underpins modern electronics. Her pioneering efforts not only enhance device performance but also pave the way for future developments in the field.