Zichron-Yaakov, Israel

Ira Noat

This inventor holds 1 USPTO granted patent. Top assignee: Tower Semiconductor Ltd.. Active years: 2008.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Ira Noat - Innovator in Semiconductor Technology

Introduction

Ira Noat is a notable inventor based in Zikhron Ya'akov, Israel. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance device performance. His work is characterized by a focus on reducing parasitic effects in electronic components.

Latest Patents

Ira Noat holds a patent for a low parasitic capacitance Schottky diode. This invention features a lightly doped polycrystalline silicon island formed on a shallow trench isolation (STI) pad. The design ensures that the polycrystalline silicon island is entirely isolated from the underlying silicon substrate, which effectively reduces leakage and capacitive coupling. The structure includes silicide contact structures that form the Schottky junction and Ohmic contact, connected by metal structures to other components on the silicon substrate. This innovative approach utilizes a standard CMOS process flow to minimize costs. Additionally, the diode can function as a bolometer detector by measuring current in reverse bias, and an array of such detectors can be used in infrared or optical image sensors.

Career Highlights

Ira Noat is currently associated with Tower Semiconductor Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that are crucial for modern electronic devices.

Collaborations

Ira collaborates with talented individuals in his field, including Sharon Levin and Shye Shapira. Their combined expertise contributes to the advancement of semiconductor technologies and the successful implementation of innovative solutions.

Conclusion

Ira Noat's contributions to semiconductor technology, particularly through his patented low parasitic capacitance Schottky diode, highlight his role as a key innovator in the industry. His work not only enhances device performance but also paves the way for future advancements in electronic components.

Profile summary based on public USPTO records.
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