The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
May. 23, 2005
Sharon Levin, Haifa, IL;
Shye Shapira, Haifa, IL;
Ira Noat, Zikhron Yaakov, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the STI pad. The resulting structure reduces leakage and capacitive coupling to the substrate. Silicide contact structures are attached to lightly-doped and heavily-doped regions of the polycrystalline silicon island to form the Schottky junction and Ohmic contact, respectively, and are connected by metal structures to other components formed on the silicon substrate. The STI pad, polycrystalline silicon island, and silicide/metal contacts are formed using a standard CMOS process flow to minimize cost. A bolometer detector is provided by measuring current through the diode in reverse bias. An array of such detectors comprises an infrared or optical image sensor.