Company Filing History:
5 out of 11,294 
1 out of 7,642 Years Active: 2010-2017
Title: Ioannis Orginos: Innovator in Memory Technology
Introduction
Ioannis Orginos is a prominent inventor based in Sunnyvale, CA, known for his contributions to memory technology. With a total of 6 patents, he has made significant advancements in the field, particularly in the design and functionality of memory devices.
Latest Patents
Orginos's latest patents include innovative solutions such as "Memory power selection using local voltage regulators." This patent describes systems and methods for utilizing a local voltage regulator embedded within a memory sub-array. The memory device features a memory sub-array with a set of memory cells and a local voltage regulator that generates a local voltage for powering the sub-array. Additionally, the device includes switch logic that selects between the local voltage and a source voltage provided by a host device.
Another notable patent is the "Centralized memory repair block," which offers centralized redundancy block repair for memory circuits. This invention is particularly relevant in high-performance memory contexts, such as last-level cache design. It addresses challenges in completing read operations within a single cycle, even when the cache is divided into smaller bank pieces. The centralized block repair supports bank interleaved access, enhancing overall throughput and allowing for features like row and column repair.
Career Highlights
Throughout his career, Orginos has worked with notable companies, including Oracle International Corporation and Sun Microsystems, Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Some of his coworkers include Hoyeol Cho and Pangjie Xu, who have collaborated with him on various projects in the field of memory technology.
Conclusion
Ioannis Orginos is a distinguished inventor whose work in memory technology has led to several impactful patents. His contributions continue to shape the future of memory devices and their applications.
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