Company Filing History:
Years Active: 2004-2012
Title: Inna V Patrick: Innovator in Semiconductor Technology
Introduction: Inna V Patrick, located in Boise, ID, is a prolific inventor with an impressive portfolio of 24 patents. His contributions to the field of semiconductor technology have paved the way for advancements that positively impact modern electronics.
Latest Patents: Among his most recent innovations are two significant patents. The first is a “Low Dose Super Deep Source/Drain Implant,” which discloses a semiconductor device aimed at reducing junction capacitance through a novel method of fabrication. This method involves performing the super deep implant after the formation of spacers, thus significantly minimizing junction capacitance in the channel region. The second patent is titled “Well for CMOS Imager,” which describes a well region of a first conductivity type located in a substrate also of the first conductivity type. This well is strategically placed beneath half the channel length of an active portion of a transistor gate, allowing for enhanced efficiency in charge collection for pinned photodiodes.
Career Highlights: Inna V Patrick has had a distinguished career, working with leading companies in technology. His tenure at Micron Technology Incorporated and Aptina Imaging Corporation has helped him refine his expertise and insights into semiconductor devices. His work has made substantial contributions to these organizations and the industry at large.
Collaborations: Throughout his career, Inna has collaborated with notable professionals in the field, including Howard E Rhodes and Richard A Mauritzson. These partnerships have fostered a creative environment that has led to significant breakthroughs in semiconductor technology.
Conclusion: Inna V Patrick stands out as an influential inventor in the semiconductor industry. His innovative patents showcase his dedication to advancing technology and his ability to collaborate effectively with peers. As technology continues to evolve, contributions like those of Inna will be vital in shaping the future of electronics.