Inna V Patrick

This inventor holds 24 USPTO granted patents, primarily in CMOS Imager Technology. Top assignees: Micron Technology Incorporated, Aptina Imaging Corporation. Active years: 2004-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Inna V Patrick. Retrieved from https://idiyas.com/inventor/inna-v-patrick

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 8

Forward Citations = 219(Granted Patents)

Company Filing History:

17 out of 39,253

Micron Technology Incorporated

patents

7 out of 580

Aptina Imaging Corporation

patents

Years Active: 2004-2012

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Areas of Expertise:

CMOS Imager

Photodiode

Pixel Design

Transfer Gate

Double Pinned

Storage Gate

Charge Transfer

Low Voltage

Isolation Process

Fabrication Methods

Source Drain Implant

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8120109 - Low dose super deep source/drain implant (2012-02-21),

2. 7847366 - Well for CMOS imager (2010-12-07),

3. 7829368 - Methods of forming double pinned photodiodes (2010-11-09),

4. 7768047 - Imager element, device and system with recessed transfer gate (2010-08-03),

5. 7749798 - Optimized photodiode process for improved transfer gate leakage (2010-07-06),

6. 7718459 - Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation (2010-05-18),

7. 7704782 - Method of forming pixel cells with color specific characteristics (2010-04-27),

8. 7687832 - Method of fabricating a storage gate pixel design (2010-03-30),

9. 7635604 - Well for CMOS imager and method of formation (2009-12-22),

10. 7511354 - Well for CMOS imager and method of formation (2009-03-31),

11. 7510900 - Methods of forming a double pinned photodiode (2009-03-31),

12. 7495273 - Double pinned photodiode for CMOS APS and method of formation (2009-02-24),

13. 7432121 - Isolation process and structure for CMOS imagers (2008-10-07),

14. 7420233 - Photodiode for improved transfer gate leakage (2008-09-02),

15. 7387908 - CMOS imager with enhanced transfer of charge and low voltage operation and method of formation (2008-06-17),

Title: Inna V Patrick: Innovator in Semiconductor Technology

Introduction: Inna V Patrick, located in Boise, ID, is a prolific inventor with an impressive portfolio of 24 patents. His contributions to the field of semiconductor technology have paved the way for advancements that positively impact modern electronics.

Latest Patents: Among his most recent innovations are two significant patents. The first is a “Low Dose Super Deep Source/Drain Implant,” which discloses a semiconductor device aimed at reducing junction capacitance through a novel method of fabrication. This method involves performing the super deep implant after the formation of spacers, thus significantly minimizing junction capacitance in the channel region. The second patent is titled “Well for CMOS Imager,” which describes a well region of a first conductivity type located in a substrate also of the first conductivity type. This well is strategically placed beneath half the channel length of an active portion of a transistor gate, allowing for enhanced efficiency in charge collection for pinned photodiodes.

Career Highlights: Inna V Patrick has had a distinguished career, working with leading companies in technology. His tenure at Micron Technology Incorporated and Aptina Imaging Corporation has helped him refine his expertise and insights into semiconductor devices. His work has made substantial contributions to these organizations and the industry at large.

Collaborations: Throughout his career, Inna has collaborated with notable professionals in the field, including Howard E Rhodes and Richard A Mauritzson. These partnerships have fostered a creative environment that has led to significant breakthroughs in semiconductor technology.

Conclusion: Inna V Patrick stands out as an influential inventor in the semiconductor industry. His innovative patents showcase his dedication to advancing technology and his ability to collaborate effectively with peers. As technology continues to evolve, contributions like those of Inna will be vital in shaping the future of electronics.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]